DMT10H025LK3-13

$0.88

Description：MOSFET N-CH 100V 47.2A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:56953487fe2d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 47.2A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H025LK3-13

Overview

The DMT10H025LK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 47.2A at TC = +25°C. The device exhibits a low on-resistance (RDS(ON)) of 22mΩ max at VGS = 10V, 30mΩ max at VGS = 6.0V, and 43.7mΩ max at VGS = 4.5V. Packaged in a TO252 (DPAK) case with a matte tin finish, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Features 100% unclamped inductive switching capability for robust end applications.
Low gate charge minimizes switching losses during operation.
Qualified to AEC-Q101 standards for high reliability requirements.
RoHS compliant and halogen-free green device construction.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and AEC-Q101 qualification standards required for your specific application environment. Ensure the TO252 package dimensions align with your PCB footprint design guidelines before finalizing procurement.

Selection Notes

Select this component when a 100V rating and high current handling up to 47.2A are required. Consider the low RDS(ON) values across various gate voltages for efficiency optimization. Evaluate the thermal resistance characteristics against your heat dissipation capabilities. Verify compatibility with standard SMD/SMT assembly processes given the TO252 package type.

Part Context

This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for surface mount installation. The product line emphasizes low on-resistance and fast switching performance for power management applications.

Replacement Considerations

Consult official datasheets for equivalent parts within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.