DMT10H032LDV-13

DMT10H032LDV-13

$0.29
  • Description:MOSFET 2N-CH 100V 18A PWRDI3333
  • Series:-

SKU:ced9d342ae77 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 18A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Rds On (Max) @ Id, Vgs:36mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:683pF @ 50V
  • Power - Max:1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (Type UXC)
  • Grade:-
  • Qualification:-

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DMT10H032LDV-13

Overview

The DMT10H032LDV-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) package. It features a drain-source voltage of 100 V and a maximum continuous drain current of 18 A at TC = +25°C. The static drain-source on-resistance is specified as 36 mΩ max at VGS = 10V and 50 mΩ max at VGS = 4.5V. Total gate charge reaches 11.9 nC at VGS = 10V. The device supports an operating temperature range of -55°C to +150°C.

Feature Summary

  • Dual configuration within a single compact surface-mount package
  • Optimized for low on-state resistance while maintaining fast switching performance
  • Validated for reliability through 100% unclamped inductive switching testing
  • Manufactured using lead-free, halogen-free, and antimony-free materials

Applications

  • Power management functions
  • Analog switching circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with the target PCB footprint. Ensure compliance with RoHS 3 and REACH directives matches project requirements. Validate thermal dissipation capabilities against the system's ambient temperature constraints.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. The 100 V rating suits medium-voltage applications. Evaluate the 36 mΩ on-resistance against conduction loss limits. Consider the 1 W power dissipation rating for standalone operation or higher ratings if utilizing adequate copper plane cooling.

Part Context

This part belongs to the DMT10 series of dual MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a small outline suitable for space-constrained designs. The device integrates two independent N-channel enhancement mode transistors into a single molded plastic case with matte tin terminals.

Replacement Considerations

DMT10H032LDV-7

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 18 A at a case temperature of +25°C.

Is the device qualified for automotive applications?

Standard versions are not explicitly listed as AEC-Q100 qualified; contact Diodes Incorporated for parts specifically qualified to automotive standards.

What packaging format does the -13 suffix indicate?

The -13 suffix indicates the device is supplied in a tape and reel containing 3,000 units.

DMT10H032LDV-13DMT10H032LDV-13
$0.29
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