SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMT10H032LDV-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) package. It features a drain-source voltage of 100 V and a maximum continuous drain current of 18 A at TC = +25°C. The static drain-source on-resistance is specified as 36 mΩ max at VGS = 10V and 50 mΩ max at VGS = 4.5V. Total gate charge reaches 11.9 nC at VGS = 10V. The device supports an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with the target PCB footprint. Ensure compliance with RoHS 3 and REACH directives matches project requirements. Validate thermal dissipation capabilities against the system's ambient temperature constraints.
Select this component when a dual N-channel topology is required in a minimal footprint. The 100 V rating suits medium-voltage applications. Evaluate the 36 mΩ on-resistance against conduction loss limits. Consider the 1 W power dissipation rating for standalone operation or higher ratings if utilizing adequate copper plane cooling.
This part belongs to the DMT10 series of dual MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI3333-8 package, which provides a small outline suitable for space-constrained designs. The device integrates two independent N-channel enhancement mode transistors into a single molded plastic case with matte tin terminals.
DMT10H032LDV-7
The maximum continuous drain current is 18 A at a case temperature of +25°C.
Standard versions are not explicitly listed as AEC-Q100 qualified; contact Diodes Incorporated for parts specifically qualified to automotive standards.
The -13 suffix indicates the device is supplied in a tape and reel containing 3,000 units.