DMT10H032LDV-7

Overview

The DMT10H032LDV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) package. It features a drain-source voltage of 100 V and a maximum on-resistance of 36 mΩ at VGS = 10V and 50 mΩ at VGS = 4.5V. The device supports a continuous drain current of 18 A at TC = +25°C and includes an integrated body diode with a forward voltage of 1 V at IS = 6A. Electrical characteristics include a gate threshold voltage of 2.5 V max, input capacitance of 683 pF, and total gate charge of 11.9 nC at VGS = 10V.

Feature Summary

• Dual configuration designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
• Manufactured with totally lead-free materials that are fully RoHS compliant, halogen free, and antimony free.
• Verified reliability through 100% unclamped inductive switching (UIS) testing during production.

Applications

• Power Management Functions
• Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging format. Confirm the component type marking '6DV' matches the intended revision. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C. Check for any automotive-specific requirements, as standard parts do not inherently meet AEC-Q100/101 standards without explicit qualification.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power circuits. The PowerDI3333-8 package offers a small footprint suitable for space-constrained designs. Evaluate thermal dissipation capabilities based on the junction-to-ambient resistance of 130 °C/W for standard PCB layouts. Consider the 100 V rating for general-purpose switching tasks where moderate current handling is sufficient.

Part Context

This part belongs to the DMT10H series of dual MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which provides a molded plastic construction with matte tin annealed terminals over a copper leadframe. The device is classified under UL flammability rating 94V-0 and has a moisture sensitivity level of 1 per J-STD-020.

Replacement Considerations

The datasheet does not list specific equivalent or substitute part numbers. Verify pinout compatibility and electrical parameters against alternative dual MOSFETs if sourcing changes occur.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 18 A at a case temperature of +25°C and 15 A at +70°C.

Is the DMT10H032LDV-7 qualified for automotive applications?

Standard versions are not explicitly qualified to AEC-Q100/101/200. Automotive-specific parts requiring change control and IATF 16949 manufacturing must be requested directly from Diodes Incorporated.

What is the typical gate threshold voltage?

The gate threshold voltage is typically 1.3 V, with a maximum specification of 2.5 V at ID = 250μA.