DMT10H032LDVW-7

$0.30

Description：MOSFET 2N-CH 100V 6.9A PWRDI3333
Series：-

SKU:0ea27c309a98 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 6.9A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
Power - Max：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
Grade：-
Qualification：-

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DMT10H032LDVW-7

Overview

The DMTH10H032LFVW-7 is a surface-mount N-channel MOSFET from Diodes Incorporated, housed in a PowerDI3333-8(SWP)UX package. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 30 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 11.9 nC at 10 V, input capacitance (Ciss) of 683 pF at 50 V, and a threshold voltage (Vgs(th)) of 2.5 V max at 250 µA. It supports a maximum gate-source voltage (Vgs) of ±20 V and operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Surface-mount design with wettable flanks for enhanced solder joint inspection reliability
N-channel enhancement mode construction for efficient switching applications
Low on-resistance characteristic optimized for power efficiency

Applications

DC-DC converter circuits
Power management modules
Load switching applications

Procurement Notes

Verify the exact part number against official Diodes Incorporated documentation, as suffixes indicate specific packaging or quality grades. Confirm RoHS3 compliance status and moisture sensitivity level prior to integration. Ensure the supplier provides valid traceability data matching the manufacturer's original component markings.

Selection Notes

Select this component when a compact N-channel MOSFET with 100 V rating and low Rds On is required in a PowerDI3333 footprint. Evaluate thermal performance based on the specified 1.7 W dissipation at ambient temperature. Compare gate charge specifications against driver capabilities to ensure adequate switching speed without excessive losses.

Part Context

This device belongs to the DMTH10 series of single N-channel MOSFETs designed for high-density power applications. The PowerDI3333 package offers a small outline while providing improved thermal performance compared to standard DFN packages. It targets portable electronics and industrial systems requiring robust surface-mount solutions.