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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT10H032LFVW-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (SWP) UX package and features wettable flanks for improved optical inspection. The device achieves a maximum on-resistance of 32mΩ at VGS=10V and 50mΩ at VGS=4.5V, supporting continuous drain currents of 17A at TC=+25°C and 13A at TC=+70°C. Total gate charge is 11.9nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production to ensure robust end application reliability
- Small form factor thermally efficient package enables higher density end products
- Wettable flank design facilitates improved optical inspection
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance requirements and is halogen and antimony free. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability.
Selection Notes
Select this component when high-efficiency power management requires minimized on-state resistance combined with superior switching performance. The small form factor is suitable for applications demanding higher product density. Verify thermal constraints against the specified junction-to-ambient resistance values for your specific PCB layout.
Part Context
This part belongs to the DMTH10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state resistance while maintaining switching efficiency. The family targets high-efficiency power management applications requiring compact footprints and reliable operation under inductive load conditions.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts. Do not substitute based solely on generic electrical parameters without confirming package compatibility and thermal characteristics.
