DMT10H032LFVW-7

$0.31

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5f3039137958 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT10H032LFVW-7

Overview

The DMT10H032LFVW-7 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) Type UX package. It features a maximum drain-source on-resistance of 32mΩ at VGS=10V and 50mΩ at VGS=4.5V. The device supports a continuous drain current of 17A at TC=+25°C and 13A at TC=+70°C. Key electrical parameters include a gate threshold voltage of up to 2.5V, total gate charge of 11.9nC at VGS=10V, and an input capacitance of 683pF. Thermal characteristics specify a junction-to-case resistance of 8.9°C/W.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Small form factor thermally efficient package enables higher density end products
Wettable flank design facilitates improved optical inspection

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the wettable flank variant matches the required PCB footprint and thermal management strategy. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by the target application standards.

Selection Notes

Select this component when a compact surface-mount solution is required for high-efficiency power management. The low on-resistance minimizes conduction losses, while the small package size supports space-constrained designs. Evaluate thermal performance based on the specified junction-to-case resistance and ensure adequate copper area on the PCB for optimal heat dissipation.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs designed for high-density applications. It utilizes the PowerDI3333-8 package, which offers a compact footprint with improved thermal performance compared to standard SMD packages. The wettable flank feature distinguishes it from non-wettable variants, aiding in automated visual inspection processes during manufacturing.