DMT10H032LK3-13

$0.22

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:2be1c3ac2890 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H032LK3-13

Overview

The DMT10H032LK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 32mΩ at VGS=10V and 48mΩ at VGS=4.5V, supporting continuous drain currents of 26A at TC=+25°C and 21A at TC=+70°C. The device utilizes a TO252 (DPAK) package with a junction-to-case thermal resistance of 3°C/W. Electrical characteristics include a gate threshold voltage range of 1.3V to 2.5V and total gate charges of 6.3nC at VGS=4.5V and 11.9nC at VGS=10V.

Feature Summary

Features low on-resistance to minimize power losses during conduction.
Incorporates low gate charge characteristics to reduce switching losses.
Undergoes 100% unclamped inductive switching testing in production for enhanced reliability.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets RoHS compliance standards and halogen-free requirements if mandated by the target application specifications. Ensure the selected variant matches the exact electrical parameters documented in the official datasheet.

Selection Notes

Select this component for applications requiring high efficiency power management where low conduction and switching losses are critical. Evaluate the thermal performance based on the specified junction-to-case resistance and ensure adequate heat sinking is provided to maintain operation within the -55°C to +150°C temperature range.

Part Context

This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed for high-efficiency power management applications, offering a balance of low on-resistance and fast switching capabilities across various voltage ratings and package options.

Replacement Considerations

Consult the manufacturer's documentation for verified equivalent parts or direct replacements. Cross-referencing should strictly adhere to official substitution guidelines to ensure compatibility with existing circuit designs and thermal constraints.

FAQ

Is the DMT10H032LK3-13 qualified for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.