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The DMTH10H032LFVW-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for surface-mount applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 26 A at case temperature. The device utilizes the PowerDI3333-8(SWP)UX package with wettable flanks to facilitate automated optical inspection. Key electrical characteristics include a maximum on-resistance of 30 mΩ at 10 V gate drive and a typical gate charge of 11.9 nC. It operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the selected variant matches the required thermal performance metrics for the intended heat dissipation environment. Cross-reference the component marking code with the latest production data to avoid counterfeit risks during assembly.
Select this component when a balance between high current handling and small footprint is required. The 30 mΩ on-resistance offers efficient conduction for moderate power levels. Consider the wettable flank feature if automated inspection is critical for quality control. Evaluate the thermal resistance parameters against the PCB copper area available for heat spreading.
This part belongs to the DMTH series of MOSFETs from Diodes Incorporated, which focuses on high-performance surface-mount solutions. The series is engineered to meet the demands of modern electronics for miniaturization and improved power efficiency. The specific model integrates advanced silicon technology within a robust plastic encapsulate.
DMT10H032LDV-7
The absolute maximum gate-source voltage is ±20 V.
Yes, the PowerDI3333-8(SWP)UX package includes wettable flanks specifically designed to allow verification of solder joints via AOI.
The gate-source threshold voltage is typically 2.5 V at a drain current of 250 µA.