DMT10H032SDVWQ-7

DMT10H032SDVWQ-7

$0.33
  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-

SKU:8206a94cd85a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 6A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:544pF @ 50V
  • Power - Max:1.2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (SWP) (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMT10H032SDVWQ-7

Overview

The DMTH10H032LFVW-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for surface-mount applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 26 A at case temperature. The device utilizes the PowerDI3333-8(SWP)UX package with wettable flanks to facilitate automated optical inspection. Key electrical characteristics include a maximum on-resistance of 30 mΩ at 10 V gate drive and a typical gate charge of 11.9 nC. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Surface-mount construction with wettable flank leads for enhanced solder joint visibility and reliability.
  • N-channel enhancement mode operation optimized for low-loss switching applications.
  • High thermal efficiency enabled by the compact PowerDI3333-8 package design.

Applications

  • DC-DC converter circuits requiring high current density
  • Power management modules in portable electronic devices
  • Load switching applications in industrial control systems

Procurement Notes

Verify the specific suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the selected variant matches the required thermal performance metrics for the intended heat dissipation environment. Cross-reference the component marking code with the latest production data to avoid counterfeit risks during assembly.

Selection Notes

Select this component when a balance between high current handling and small footprint is required. The 30 mΩ on-resistance offers efficient conduction for moderate power levels. Consider the wettable flank feature if automated inspection is critical for quality control. Evaluate the thermal resistance parameters against the PCB copper area available for heat spreading.

Part Context

This part belongs to the DMTH series of MOSFETs from Diodes Incorporated, which focuses on high-performance surface-mount solutions. The series is engineered to meet the demands of modern electronics for miniaturization and improved power efficiency. The specific model integrates advanced silicon technology within a robust plastic encapsulate.

Replacement Considerations

DMT10H032LDV-7

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±20 V.

Does the package support automated optical inspection?

Yes, the PowerDI3333-8(SWP)UX package includes wettable flanks specifically designed to allow verification of solder joints via AOI.

What is the threshold voltage specification?

The gate-source threshold voltage is typically 2.5 V at a drain current of 250 µA.

DMT10H032SDVWQ-7DMT10H032SDVWQ-7
$0.33
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