DMT10H052LFDF-13

$0.13

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0898c05e4630 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V U-DFN2020
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：258 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT10H052LFDF-13

Overview

The DMT10H052LFDF-13 is a 100V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source on-resistance of 52mΩ at VGS=10V and 75mΩ at VGS=4.5V. Continuous drain current ratings are 5A at TA=+25°C and 4.1A at TA=+70°C. The device supports a pulsed drain current of 30A, with a gate-source voltage limit of ±20V. Thermal resistance to ambient is 151°C/W, and the junction temperature range spans from -55°C to +150°C.

Feature Summary

Designed for low-profile applications with a 0.6mm profile and compact PCB footprint.
Manufactured using totally lead-free materials that are fully RoHS compliant.
Halogen and antimony free construction designated as a green device.
Verified through 100% unclamped inductive switching tests during production.

Applications

Power-management functions
Battery-operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. Confirm the component meets all applicable environmental directives relevant to your region. Ensure the selected variant aligns with your thermal management requirements and board space constraints before finalizing procurement orders.

Selection Notes

Select this component when a small form factor is critical due to its U-DFN2020-6 package dimensions. Evaluate the thermal resistance characteristics against your system's heat dissipation capabilities. Consider the gate threshold voltage specifications to ensure compatibility with your logic-level drive signals.

Part Context

This part belongs to Diodes Incorporated's high-reliability MOSFET portfolio designed for efficient power management. It utilizes silicon technology optimized for minimizing on-state resistance while maintaining robust switching performance suitable for demanding electronic environments.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related Q-suffix parts listed by the manufacturer. Verify pinout and electrical parameters match exactly before substituting any alternative components.

FAQ

Is the DMT10H052LFDF-13 qualified for automotive use?

No, this specific part is not automotive qualified. For automotive applications requiring AEC-Q standards, you must select the related Q-suffix version provided by the manufacturer.