DMT10H072LDV-13

Overview

The DMT10H072LDV-13 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 100 V and a maximum on-resistance of 66 mΩ at VGS = 10 V. The device supports a continuous drain current of 12 A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration for compact power management
• Low on-state resistance for high efficiency
• Fast switching speed with low input capacitance
• Totally lead-free and fully RoHS compliant

Applications

• Power-management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier format. Confirm that the component meets the required automotive or industrial standards if applicable, as standard versions may differ from qualified variants. Ensure compatibility with the specified PowerDI3333-8 footprint during procurement.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET in a small surface-mount package. Consider the 66 mΩ on-resistance limit at VGS = 10 V for conduction loss calculations. Evaluate the thermal resistance characteristics against the expected ambient temperature and duty cycle requirements.

Part Context

This part belongs to the DMT10 series of dual MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UXC) package, which provides a compact form factor suitable for space-constrained designs while maintaining robust electrical performance for general-purpose switching applications.

Replacement Considerations

Consult official documentation for verified substitutes such as the DMT10H072LDV-7 variant, which shares identical electrical specifications but differs in packaging quantity.