DMT10H072LDV-7

Overview

The DMT10H072LDV-7 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 100V drain-source voltage rating and low on-resistance of 66mΩ at VGS=10V and 114mΩ at VGS=4.5V. The device supports continuous drain currents of 12A at TC=+25°C and 9A at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 4.5nC at VGS=10V, and input capacitance of 228pF. Thermal resistance is 120°C/W junction-to-ambient and 6.7°C/W junction-to-case.

Feature Summary

• Dual configuration with two independent N-channel MOSFETs integrated into a single compact surface-mount package.
• Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining fast switching performance.
• Compliant with RoHS standards and manufactured using halogen-free and antimony-free green materials.

Applications

• Power-management functions
• Analog switches

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The -7 suffix indicates a 2,000-unit tape and reel carrier, while the -13 suffix denotes a 3,000-unit tape and reel. Confirm that the PowerDI3333-8 (Type UXC) package dimensions align with the target PCB footprint layout requirements before finalizing procurement.

Selection Notes

Select this component when a dual N-channel topology is required within a constrained board area. The device offers a balance of low static conduction losses and dynamic switching efficiency suitable for 100V systems. Ensure the thermal design accounts for the specified junction-to-ambient resistance values under steady-state operating conditions.

Part Context

This part belongs to the DMT10 series of dual MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 form factor, which provides a small footprint compared to traditional discrete packages. The internal circuit consists of two isolated N-channel enhancement mode transistors sharing a common substrate structure.

Replacement Considerations

Direct substitutes must match the dual N-channel architecture, 100V rating, and PowerDI3333-8 package. Verify pinout compatibility as the device features dual drains, gates, and sources. Cross-reference RDS(ON) and thermal characteristics to ensure equivalent performance in the target application.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 12A at a case temperature of +25°C and 10A at a case temperature of +70°C.

Does this component support automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly, as standard production may not automatically include these certifications.

What is the gate threshold voltage range?

The gate threshold voltage ranges from a minimum of 1V to a maximum of 3V when tested with a drain-source voltage equal to the gate-source voltage at a drain current of 250µA.