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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：228 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT10H072LFV-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage rating of 100 V and a maximum continuous drain current of 4.7 A at Ta = +25°C, or 20 A at Tc = +25°C. The device exhibits a static drain-source on-resistance of 62 mΩ at VGS = 10V and 77 mΩ at VGS = 6V. Total power dissipation is rated at 2 W at Ta = +25°C, with an operating junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than SO-8 packages.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process, including RoHS and halogen-free specifications.
Selection Notes
Select this component when a compact N-channel MOSFET with a 100 V breakdown voltage is required for space-constrained designs. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at either 6V or 10V. Verify that the thermal management strategy accommodates the junction-to-ambient thermal resistance characteristics provided in the datasheet.
Part Context
This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which is a molded plastic package designed for surface mount applications. The product line emphasizes low on-resistance and small physical footprint to support modern electronic miniaturization requirements.
Replacement Considerations
The datasheet lists DMT10H072LFV-13 as an equivalent part number differing only in the quantity per reel (3,000 units). No other substitute part numbers are documented in the official source material.
FAQ
What is the maximum pulsed drain current for this device?
The maximum pulsed drain current is 80 A, measured with a 10µs pulse duration at a case temperature of +25°C, limited by the package.
Is the DMT10H072LFV-7 suitable for life support devices?
No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval from the Chief Executive Officer.
