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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO220AB T
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMT10H9M9LCT is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TO-220AB through-hole package. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 101A at TC = +25°C, decreasing to 80A at TC = +70°C. The static drain-source on-resistance (RDS(ON)) is specified as 8.5mΩ max at VGS = 10V with ID = 20A, and 14mΩ max at VGS = 4.5V with ID = 5A. Total power dissipation reaches 156W at TC = +25°C with a thermal resistance junction-to-case (RθJC) of 0.8°C/W.
Feature Summary
- Low input capacitance for fast switching performance
- High BVDSS rating suitable for demanding power applications
- Low input/output leakage characteristics
- Lead-free finish compliant with RoHS directives
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific datasheet revision (DS43274 Rev. 3 - 2) against your design requirements. Confirm that the TO-220AB case material meets UL flammability classification 94V-0 standards. Ensure the matte tin finish terminals are solderable per MIL-STD-202 Method 208 for your assembly process. Check for automotive qualification if AEC-Q100/101/200 compliance is required.
Selection Notes
Select this component when a 100V N-channel MOSFET with high current handling capability is needed. The low RDS(ON) values at both 10V and 4.5V gate drive voltages support efficient power management. Consider the thermal resistance of 0.8°C/W for heatsinking calculations. Verify that the operating temperature range of -55°C to +150°C fits the environmental constraints.
Part Context
This device belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology to achieve low on-resistance and fast switching speeds. The product is designed for high-efficiency power management applications requiring robust performance in compact packages.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent part numbers. Cross-referencing should be performed based on matching electrical parameters such as BVDSS, ID, and RDS(ON). Ensure any substitute component maintains compatibility with the TO-220AB footprint and thermal requirements.
