SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
DMT10H9M9SK3-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage range of 61V to 100V and utilizes a TO-252 surface-mount package. The device is designed for power switching applications, offering reliable performance in compact form factors. It operates with RoHS compliance and is supplied in tape and reel packaging for automated assembly processes.
Verify the specific part number DMT10H9M9SK3-13 against official Diodes Incorporated documentation to confirm exact electrical parameters. Ensure compatibility with required voltage ratings and thermal management solutions. Confirm RoHS status and packaging type match project specifications before procurement.
Select this component for applications requiring N-channel MOSFETs within the 61V to 100V breakdown range. Consider the TO-252 package for suitable heat dissipation and board space constraints. Evaluate thermal resistance requirements against expected operating conditions to ensure reliability.
This component belongs to the Diodes Incorporated discrete semiconductor portfolio, specifically within their MOSFET product line. It serves as a power switch solution for various electronic systems requiring medium-voltage handling capabilities in a standardized surface-mount format.
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering equivalent parts from other manufacturers.