DMT10H9M9SK3-13

DMT10H9M9SK3-13

$0.40
  • Description:MOSFET BVDSS: 61V~100V TO252 T&R
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:aa96477dcf65 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 61V~100V TO252 T&R
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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DMT10H9M9SK3-13

Overview

DMT10H9M9SK3-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage range of 61V to 100V and utilizes a TO-252 surface-mount package. The device is designed for power switching applications, offering reliable performance in compact form factors. It operates with RoHS compliance and is supplied in tape and reel packaging for automated assembly processes.

Feature Summary

  • N-channel enhancement mode construction
  • Surface-mount TO-252 package design
  • RoHS compliant manufacturing

Applications

  • Power switching circuits
  • General purpose electronic control

Procurement Notes

Verify the specific part number DMT10H9M9SK3-13 against official Diodes Incorporated documentation to confirm exact electrical parameters. Ensure compatibility with required voltage ratings and thermal management solutions. Confirm RoHS status and packaging type match project specifications before procurement.

Selection Notes

Select this component for applications requiring N-channel MOSFETs within the 61V to 100V breakdown range. Consider the TO-252 package for suitable heat dissipation and board space constraints. Evaluate thermal resistance requirements against expected operating conditions to ensure reliability.

Part Context

This component belongs to the Diodes Incorporated discrete semiconductor portfolio, specifically within their MOSFET product line. It serves as a power switch solution for various electronic systems requiring medium-voltage handling capabilities in a standardized surface-mount format.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering equivalent parts from other manufacturers.

DMT10H9M9SK3-13DMT10H9M9SK3-13
$0.40
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