DMT12H007LPS-13

$1.41

Description：MOSFET N-CH 120V 90A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b2e56f43aec1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 120V 90A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：120 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3224 pF @ 60 V
FET Feature：-
Power Dissipation (Max)：2.9W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

Download product information

DMT12H007LPS-13

Overview

The DMT12H007LPS-13 is a 120V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 7.8mΩ at VGS=10V and 14.1mΩ at VGS=4.5V, supporting continuous drain currents of 90A at TC=+25°C and 72A at TC=+70°C. The device utilizes a PowerDI5060-8 package with a profile under 1.1mm. Key electrical parameters include a gate-source voltage rating of ±20V, total gate charge of 49nC, and thermal resistance from junction to case of 1.3°C/W.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
Thermally efficient PowerDI5060-8 package design for cooler operation
Low RDS(ON) characteristics to minimize on-state power losses
Package profile below 1.1mm suitable for thin application designs

Applications

Switching applications
DC-DC converters
High efficiency power management systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the procurement channel is authorized to avoid warranty or liability issues associated with unauthorized sales channels.

Selection Notes

Select this component when a 120V rating is required alongside high current handling capabilities up to 90A. The low on-resistance makes it suitable for minimizing conduction losses in power conversion circuits. Consider the PowerDI5060-8 package dimensions if board space constraints require a profile under 1.1mm. Verify thermal management requirements against the specified junction-to-case thermal resistance.

Part Context

This part belongs to the DMTH/DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-state resistance with superior switching performance. The series targets high-efficiency power management solutions where compact form factors and robust thermal characteristics are critical for system integration.

Replacement Considerations

Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pin configurations and thermal specifications.

FAQ

Is the DMT12H007LPS-13 qualified for automotive applications?

For automotive applications requiring AEC-Q101 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.