DMT12H065LFDF-13

$0.26

Description：MOSFET N-CH 115V 4.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a438d33f8773 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 115V 4.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：115 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：252 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT12H065LFDF-13

Overview

The DMT12H065LFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 115V drain-source breakdown voltage and a maximum continuous drain current of 4.3A at 25°C. The device offers a low on-state resistance of 65mΩ at VGS=10V and 70mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 case with a 0.6mm profile, it supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features a 0.6mm profile and a compact PCB footprint of 4mm², making it ideal for low-profile applications.
Manufactured using totally lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Applications

DC-DC Primary Switch
Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device specifications outlined in the datasheet notes.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-efficiency power management circuits. The device is suitable for applications demanding robust UIS reliability and low conduction losses within a 115V voltage rating. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the Diodes Incorporated MOSFET product line, categorized under transistors. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type F) package. The marking code '96' identifies the product type on the component body.

Replacement Considerations

The datasheet lists DMT12H065LFDF-7 as an equivalent part number with identical electrical characteristics but a different quantity per reel (3,000 units). No other substitute part numbers are documented in the provided source material.