DMT12H065LFDF-7

$1.16

Description：MOSFET N-CH 115V 4.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d08ce20bf2ff Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 115V 4.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：115 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：252 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT12H065LFDF-7

Overview

The DMT12H065LFDF-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of 115V and a maximum on-resistance of 65mΩ at VGS=10V. The device supports a continuous drain current of 4.3A at 25°C and offers low thermal resistance for efficient power management.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance
Features a 0.6mm profile ideal for low-profile applications
Includes 100% Unclamped Inductive Switching (UIS) testing in production
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

DC-DC Primary Switch
Load Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per reel packaging configuration. Confirm that the component meets all required environmental standards, including RoHS 3 compliance and halogen-free specifications, before finalizing procurement documentation.

Selection Notes

Select this component for high-efficiency power management designs requiring a compact footprint. Ensure the application operates within the specified junction temperature range of -55°C to +150°C and respects the absolute maximum ratings for gate-source voltage and pulsed drain current.

Part Context

This part belongs to the DMT10 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 case with a molded plastic green molding compound. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-208.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Do not assume cross-compatibility with other brands or different package types without verifying pinout and electrical parameter alignment.