DMT15H053SPSW-13

$0.30

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3108d9cec882 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V POWERDI5
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：66mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：814 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta), 90W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT15H053SPSW-13

Overview

The DMT15H053SPSW-13 is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 150V and a typical static drain-source on-resistance (RDS(ON)) of 46mΩ at VGS=10V, with a maximum of 66mΩ. The device supports a continuous drain current (ID) of 24A at TC=+25°C and a pulsed drain current (IDM) of 96A. Total gate charge (Qg) is typically 11.5nC. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Features low on-resistance and fast switching characteristics for high-efficiency power management applications.
Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end application reliability.
Utilizes a thermally efficient PowerDI® package with a profile under 1.1mm, suitable for thin applications.

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the design accommodates the specified thermal resistance values for the intended mounting conditions on FR-4 substrates.

Selection Notes

Select this component when a 150V rating is required alongside low conduction losses indicated by the 66mΩ maximum RDS(ON). Consider the 11.5nC gate charge for minimizing switching losses in high-frequency circuits. Verify that the operating environment stays within the -55°C to +150°C junction temperature limits and that the PCB layout supports the exposed drain pad for optimal thermal dissipation.

Part Context

This part belongs to the DMTH/DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed using silicon technology and housed in the PowerDI5060-8/SWP surface-mount package. The device is qualified to JEDEC standards for high reliability and is distinct from its automotive-compliant counterpart, the DMT15H053SPSWQ.

Replacement Considerations

The datasheet identifies the DMT15H053SPSWQ as an available automotive-compliant alternative. No other direct substitute part numbers are explicitly listed in the provided documentation.

FAQ

Is the DMT15H053SPSW-13 qualified for automotive applications?

No, the standard DMT15H053SPSW-13 is not automotive qualified. An automotive-compliant version, designated as DMT15H053SPSWQ, is available under a separate datasheet.