DMT2004UFV-7

$0.20

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ed945eefa8d6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：24 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT2004UFV-7

Overview

The DMT2004UFV-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UX) package with a drain-source voltage of 24 V and a continuous drain current of 70 A at +25°C case temperature. The device offers low on-state resistance, rated at 5.0 mΩ maximum at VGS = 10V and 6.5 mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low RDS(ON) ensures minimized on-state losses for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
100% Unclamped Inductive Switch (UIS) Test in Production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 2,000 units per reel. Confirm that the required component matches this exact packaging configuration before placing orders to ensure compatibility with automated assembly processes.

Selection Notes

Select this component for designs requiring a compact footprint and high thermal efficiency. The PowerDI3333-8 package reduces board space compared to traditional SO-8 packages. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance across the intended operating temperature range.

Part Context

This part belongs to the DM series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with superior switching performance. The series targets modern electronics where space constraints and energy efficiency are critical design parameters.