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The DMT2005UDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 24V drain-source voltage rating and utilizes the PowerDI3333-8 (Type UXC) surface-mount package. The device provides low on-state resistance, with maximum values of 7mΩ at VGS=10V, 8mΩ at VGS=4.5V, 10mΩ at VGS=3.7V, and 12mΩ at VGS=2.5V. Continuous drain current capabilities range from 38A to 50A depending on the gate drive voltage. Key electrical parameters include a gate-source voltage limit of ±12V, total power dissipation of 0.9W in ambient conditions, and an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging format when sourcing components. Confirm that the required quantity aligns with this standard reel size or check for alternative suffixes if smaller quantities are needed. Ensure compliance with RoHS and lead-free manufacturing standards as specified in the product documentation.
Select this component for designs requiring dual isolated channels within a minimal board area constraint. Evaluate thermal requirements carefully, as the small PowerDI3333-8 package limits total power dissipation to 0.9W without significant copper heat sinking. Verify that the system's gate drive voltage meets the minimum thresholds required to achieve the lowest specified on-resistance values for optimal efficiency.
This part belongs to the DMT2005 series of dual MOSFETs from Diodes Incorporated. It shares the same core die and electrical specifications as the DMT2005UDV-7 variant, differing only in the packaging quantity and reel configuration. Both variants utilize the identical PowerDI3333-8 case style and pinout arrangement.
DMT2005UDV-7