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Product Detailed Parameters
- Description：MOSFET 2N-CH 25V 11.6A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
- Rds On (Max) @ Id, Vgs：6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA, 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15.9nC @ 10V, 57.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1010pF @ 13V, 4016pF @ 13V
- Power - Max：1.24W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type F)
- Grade：-
- Qualification：-
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Overview
The DMT26M0LDG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and a gate-source voltage (Vgs) rating of ±12 V. Continuous drain current (Id) specifications are listed as 11.6 A and 20.1 A under different thermal conditions, with a maximum power dissipation (Pd) of 1.24 W at ambient temperature. The on-resistance (Rds(on)) is 7.5 Ohms, and the gate threshold voltage (Vgs(th)) is 2.2 V. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Dual N-channel configuration within a compact PowerDI3333-8 footprint for space-constrained designs.
- Enhancement mode operation suitable for low-voltage switching applications.
- Robust thermal performance supporting junction temperatures up to 150°C.
Applications
- Low-voltage DC-DC converter circuits
- Battery protection modules
- Load switching in portable electronics
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date to guarantee parameter accuracy before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET with a 25 V rating is required in a small outline package. Evaluate the 7.5 Ohm on-resistance against circuit efficiency needs. Confirm that the 1.24 W power dissipation capability aligns with the thermal management strategy of the host system design.
Part Context
This part belongs to the Diodes Incorporated DMT series of surface-mount MOSFETs. It shares the PowerDI3333-8 package form factor with other devices in the lineup, such as the DMT26M0LDG-13, which differs primarily in tape and reel quantity. The series targets cost-sensitive consumer and industrial applications requiring reliable low-voltage switching.
Replacement Considerations
The DMT26M0LDG-13 is a verified substitute offering identical electrical characteristics but packaged in a 3000-unit reel instead of 2000 units. Verify pinout compatibility and package dimensions before substitution.
