DMT3003LFGQ-13

$0.31

Description：MOSFET N-CH 30V 22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1c5e315d62f9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 22A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 62W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT3003LFGQ-13

Overview

The DMT3003LFGQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 100A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 3.2mΩ at VGS = 10V and 5.5mΩ at VGS = 4.5V. Total gate charge (QG) is 44nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Advanced technology optimized for DC-DC converters with excellent QGD × RDS(ON) figure of merit
Small form factor thermally efficient package enabling higher density end products
100% unclamped inductive switching tested in production for robustness

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by the project specifications. Ensure the procurement channel provides traceability documentation consistent with IATF 16949 certified manufacturing facilities.

Selection Notes

Select this component when a 30V rating and high current handling up to 100A are required in a compact surface-mount footprint. The low RDS(ON) minimizes conduction losses, making it suitable for power management circuits. Consider the thermal resistance characteristics and package size constraints relative to SO-8 alternatives during the design phase.

Part Context

This part belongs to the DMT3003LFGQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive reliability requirements while offering a small form factor. The device is manufactured in IATF 16949 certified facilities and supports change control protocols necessary for automotive supply chains.