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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 25A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Rds On (Max) @ Id, Vgs：10mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1155pF @ 15V
- Power - Max：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT3006LDV-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXC) surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current of 25A at TC = +25°C. The device offers a maximum on-resistance of 10mΩ at VGS = 10V and 14mΩ at VGS = 4.5V. Total gate charge is specified as 16.7nC at VGS = 10V. Thermal resistance from junction to ambient is 134°C/W under steady-state conditions with minimum pad layout.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single compact footprint.
- Optimized for high-efficiency power management through minimized on-state resistance and superior switching performance.
- Compliant with RoHS directives and manufactured using halogen-free and antimony-free green materials.
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring dual isolated channels in a minimal board area. Evaluate thermal dissipation requirements based on the 134°C/W junction-to-ambient resistance for standard FR-4 PCB layouts. Consider the 30V breakdown voltage and 25A current capacity relative to peak load demands and duty cycles.
Part Context
This part belongs to the DMT3006 series of dual MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI3333-8 package to provide a small form factor solution. The device is intended to replace discrete single MOSFET arrangements where space constraints and efficiency are critical design parameters.
Replacement Considerations
DMT3006LDV-13 is a parameter-equivalent alternative offering identical electrical characteristics but packaged in a 3000-unit tape and reel format instead of the 2000-unit reel found in the -7 suffix variant.
FAQ
What is the maximum continuous drain current for this device?
The maximum continuous drain current is 25A when the case temperature is maintained at +25°C.
Does the DMT3006LDV-7 contain internal isolation between the two channels?
Yes, the datasheet describes it as a dual MOSFET with separate Drain, Source, and Gate terminals for each channel (D1/S1/G1 and D2/S2/G2).
What is the typical gate threshold voltage range?
The gate threshold voltage ranges from a minimum of 1.0V to a maximum of 3.0V when tested at ID = 250µA.
