DMT3006LFDF-7

DMT3006LFDF-7

$0.50
  • Description:MOSFET N-CH 30V 14.1A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Cut Tape (CT),Tape & Box (TB)

SKU:1e39e422b346 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 14.1A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Cut Tape (CT),Tape & Box (TB)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:14.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):3.7V, 10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):800mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-DFN2020-6 (Type F)
  • Package / Case:6-UDFN Exposed Pad

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DMT3006LFDF-7

Overview

The DMT3006LFDF-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 14.1A at 25°C. The device offers a low on-state resistance of 7mΩ at VGS=10V, ensuring high efficiency in power management applications. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6mm profile, it supports operating temperatures from -55°C to +150°C.

Feature Summary

  • Designed for minimized on-state resistance while maintaining superior switching performance.
  • Features a low gate threshold voltage suitable for low-voltage drive applications.
  • Compliant with AEC-Q101 standards for high reliability requirements.

Applications

  • Battery Management Systems
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the component meets RoHS directives and is halogen-free if environmental compliance is required for the assembly process. Ensure the U-DFN2020-6 footprint matches the PCB layout specifications provided in the datasheet.

Selection Notes

Select this component when a compact 0.6mm profile is necessary for space-constrained designs. The U-DFN2020-6 package provides a small PCB footprint of approximately 4mm². Consider the thermal resistance characteristics and the need for adequate copper area on the substrate to manage power dissipation effectively during operation.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molding compound case. The product line emphasizes high efficiency and reliability for modern electronic power management solutions.

Replacement Considerations

DMT3006LFDF-13

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current is 80A, based on a 10μs pulse duration with a 1% duty cycle.

Is the device qualified for automotive applications?

Yes, the DMT3006LFDF is qualified to AEC-Q101 standards for high reliability.

DMT3006LFDF-7DMT3006LFDF-7
$0.50
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