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The DMT3006LFDF-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 14.1A at 25°C. The device offers a low on-state resistance of 7mΩ at VGS=10V, ensuring high efficiency in power management applications. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6mm profile, it supports operating temperatures from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the component meets RoHS directives and is halogen-free if environmental compliance is required for the assembly process. Ensure the U-DFN2020-6 footprint matches the PCB layout specifications provided in the datasheet.
Select this component when a compact 0.6mm profile is necessary for space-constrained designs. The U-DFN2020-6 package provides a small PCB footprint of approximately 4mm². Consider the thermal resistance characteristics and the need for adequate copper area on the substrate to manage power dissipation effectively during operation.
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molding compound case. The product line emphasizes high efficiency and reliability for modern electronic power management solutions.
DMT3006LFDF-13
The maximum pulsed drain current is 80A, based on a 10μs pulse duration with a 1% duty cycle.
Yes, the DMT3006LFDF is qualified to AEC-Q101 standards for high reliability.