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Product Detailed Parameters
- Description：MOSFET N-CH 30V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 55.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1320 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：27.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT3006LFG-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 55.6A at a case temperature of +25°C. The device exhibits a low on-state resistance of 6mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge is 16.7nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 surface-mount package.
Feature Summary
- Advanced technology designed for DC-DC converters with minimized on-state losses
- Small form factor thermally efficient package enabling higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% UIS (avalanche) rated
Applications
- Backlighting
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm compliance requirements including RoHS directives and halogen-free status against project specifications before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining high current handling capabilities. Evaluate thermal performance based on the specified junction-to-case and junction-to-ambient thermal resistances relative to the target PCB copper layout and operating environment.
Part Context
This part belongs to the DMT3006 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series offers various packaging options including PowerDI3333-8, PowerDI5060-8, and DFN configurations to suit different power density and thermal dissipation requirements across portable and industrial electronics.
Replacement Considerations
Consult official substitution guides for verified alternatives such as the DMT3006LFDF-13 or DMT3006LDK-7 which share similar electrical characteristics but utilize different package footprints.
