DMT3006LFV-7

$0.24

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f7a587c538a8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1155 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMT3006LFV-7

Overview

The DMT3006LFV-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and a continuous drain current (ID) of 60 A at TC = +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 7 mΩ at VGS = 10 V and 11 mΩ at VGS = 4.5 V. Total gate charge (Qg) is 16.7 nC at VGS = 10 V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000 units per tape and reel packaging configuration. Confirm that the PowerDI3333-8 case type matches the required footprint and thermal design parameters for the target application. Ensure compliance with RoHS and halogen-free requirements if specified in the procurement specifications.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The PowerDI3333-8 package provides significant board area reduction compared to traditional SO-8 packages. Consider the 30 V breakdown voltage and 60 A current rating against the specific load requirements of the circuit.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) surface-mount package, which is designed for high thermal efficiency and small footprint applications. The series focuses on minimizing on-state losses while maintaining robust switching characteristics.

Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMT3006 family or similar 30V N-channel MOSFETs in the PowerDI3333-8 package. Verify pinout compatibility and electrical parameter equivalence before substitution.