DMT3006LPB-13

Overview

The DMT3006LPB-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (Type S) package. It integrates two independent devices: Q1 with a maximum drain-source voltage of 30V and on-resistance of 11.1mΩ at VGS=10V; Q2 features 30V breakdown and 6.0mΩ on-resistance at VGS=10V. Both channels support continuous drain currents up to 35A and 50A respectively at TC=+25°C. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration integrating two independent MOSFETs in a single thermally efficient PowerDI5060-8 package.
• Optimized for high conversion efficiency through minimized on-state resistance and low input capacitance.
• Designed for fast switching speeds and superior thermal performance to reduce operating temperatures.
• Compliant with RoHS standards and manufactured using halogen-free and antimony-free green materials.

Applications

• Notebook battery power management systems
• DC-DC converters
• Load switch applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, specifically RoHS directives and halogen-free specifications, by checking the latest product documentation before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring two independent N-channel switches within a compact footprint. Ensure the application utilizes the PowerDI5060-8 (Type S) package dimensions and pad layout. Verify that the gate drive voltages align with the specified thresholds for optimal RDS(ON) performance and confirm thermal management strategies accommodate the junction-to-case thermal resistance characteristics.

Part Context

This part belongs to Diodes Incorporated's generation of dual MOSFETs designed to minimize on-state losses while maintaining high switching performance. It serves as an integrated solution for space-constrained power management designs, replacing discrete single-channel components to simplify board layout and improve overall system efficiency in portable electronics.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully when considering other dual MOSFET packages.

FAQ

What are the distinct electrical characteristics of Q1 versus Q2?

Q1 has a typical RDS(ON) of 11.1mΩ at VGS=10V with a continuous current rating of 35A. Q2 offers lower resistance at 6.0mΩ at VGS=10V with a higher current rating of 50A under the same conditions.

How is the device packaged and marked?

It uses the PowerDI5060-8 (Type S) case. Markings include 'T3006LB' for the product type, followed by date code YYWW, and the lead-free symbol 'e3'.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case (RθJC) is specified as 4°C/W based on measurements taken at the soldering point on the exposed drain pad.