DMT3008LFDF-13

$0.22

Description：MOSFET N-CH 30V 12A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fd4a63ea99e2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：886 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT3008LFDF-13

Overview

The DMT3008LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a maximum on-resistance (R_DS(ON)) of 16 mΩ at V_GS = 4.5 V, supporting a continuous drain current of 10.4 A. At V_GS = 10 V, the R_DS(ON) is 10 mΩ with a current rating of 12.0 A. The device utilizes a U-DFN2020-6 package with a 0.6 mm profile and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Features a low gate threshold voltage suitable for logic-level driving applications.
Compliant with RoHS directives and halogen/antimony-free green manufacturing standards.

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, specifically RoHS and lead-free specifications, before finalizing procurement documentation.

Selection Notes

Select this component when a compact footprint is required due to its U-DFN2020-6 case size. Ensure the application circuit can provide sufficient gate drive voltage to achieve the lower 10 mΩ on-resistance if higher current handling is necessary. Verify thermal dissipation requirements against the specified thermal resistance values.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching and power management tasks where low profile and efficient conduction are prioritized. The product line emphasizes minimizing on-resistance without compromising switching speed.

Replacement Considerations

Consult official datasheets for cross-reference candidates such as the DMT3006LFDF or DMT3004LPS variants, ensuring matching voltage ratings and package dimensions.