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The DMT3009LEV-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UXD) surface-mount package. It features a drain-source voltage of 30V and a maximum continuous drain current of 20A at 25°C. The device offers a low on-resistance of 12mΩ at VGS=10V and 20mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 12nC at 10V and fast switching times with turn-on delay of 3.2ns and fall time of 1.5ns.
Verify the specific ordering suffix to confirm packaging quantity; the -13 suffix indicates a 3,000-unit tape and reel format. Confirm compliance requirements against the manufacturer's official documentation regarding RoHS and REACH directives. Ensure the application environment remains within the specified thermal limits and junction temperature range of -55°C to +150°C.
Select this component when a dual N-channel topology is required in a space-constrained design. The PowerDI3333-8 package provides a balance between thermal dissipation and board area efficiency. Consider the 30V rating and 20A current capacity for low-voltage DC-DC converters or load switching applications requiring fast transient response.
This part belongs to the DMT3009 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which is designed for high-current density applications while maintaining a small outline. The device represents a newer generation optimized for minimizing RDS(ON) without compromising switching speed.
DMT3009LEV-7 is a parameter-equivalent alternative offered by Diodes Incorporated, differing primarily in the tape and reel packaging quantity.
Each channel supports a maximum continuous drain current of 20A at a case temperature of +25°C.
Yes, the operating and storage temperature range extends up to +150°C for the junction temperature.
The typical turn-off fall time is 1.5ns under standard test conditions.