DMT3020LDV-7

$0.68

Description：MOSFET 2N-CH 30V 32A PWRDI3333
Series：-

SKU:d70504f7e81f Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 32A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
Power - Max：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type UXC)
Grade：-
Qualification：-

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DMT3020LDV-7

Overview

The DMT3020LDV-7 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 30V and a continuous drain current of 32A at 25°C case temperature. The maximum on-resistance is 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. Gate threshold voltage ranges from 1.0V to 2.5V, with a total gate charge of 7nC at VGS=10V. Operating temperatures span -55°C to +150°C.

Feature Summary

Dual configuration for space-efficient circuit designs
Optimized low on-state resistance for high efficiency
Fast switching speed capabilities
Low input and output leakage currents

Applications

Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the supplier provides original manufacturer documentation to validate authenticity before integration into production systems.

Selection Notes

Select this component when a compact dual N-channel solution is required for power management applications. Evaluate the thermal resistance characteristics against the expected ambient operating conditions. Consider the low gate charge and fast switching speeds for high-frequency operation requirements.

Part Context

This device belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It utilizes the PowerDI3333-8 (Type UXC) surface-mount package, which offers a small footprint suitable for dense PCB layouts.