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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
- Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：393pF @ 15V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT3020LFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) package with a 0.6mm profile. The device supports a drain-source voltage of 30V and offers low on-resistance, rated at 20mΩ maximum at VGS=10V and ID=9A, or 32mΩ at VGS=4.5V and ID=7A. Continuous drain current reaches 7.7A at TA=+25°C. Total gate charge is 7nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact U-DFN2020-6 package
- Low on-resistance for high-efficiency power management
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets the required environmental compliance standards, including RoHS 3 and halogen-free specifications, before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a low-profile dual MOSFET solution. Ensure the design accommodates the 30V drain-source voltage limit and the thermal constraints associated with the U-DFN2020-6 package. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMT3020 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with variants such as DMT3020LFDB-7, differing primarily in packaging quantity. The series is designed to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
DMT3020LFDB-7 is a verified substitute offering identical electrical specifications but packaged in 3,000-unit tape and reels instead of 10,000-unit reels.
