DMT3020LFDB-7

DMT3020LFDB-7

$0.77
  • Description:MOSFET 2N-CH 30V 7.7A 6UDFN
  • Series:-

SKU:ebb0fb8519dc Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 7.7A 6UDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7.7A
  • Rds On (Max) @ Id, Vgs:20mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:393pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:U-DFN2020-6 (Type B)
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMT3020LFDB-7

Overview

The DMT3020LFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 7.7A at +25°C. The device offers a low on-resistance of 20mΩ at VGS=10V and 32mΩ at VGS=4.5V. Packaged in a U-DFN2020-6 (Type B) case with a 0.6mm profile, it supports a junction temperature range of -55°C to +150°C. Total power dissipation reaches 1.8W with a copper plate mount. The component is qualified to AEC-Q101 standards.

Feature Summary

  • Dual N-channel configuration for high-efficiency power management
  • Low gate threshold voltage enabling easy drive compatibility
  • Totally lead-free and fully RoHS compliant construction
  • Qualified to AEC-Q101 standards for automotive reliability

Applications

  • General purpose interfacing switch
  • Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6 (Type B) package dimensions match the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 handling guidelines during assembly processes.

Selection Notes

Select this component when a compact dual MOSFET solution is required for low-profile designs. The 0.6mm case height makes it suitable for space-constrained applications. Evaluate the thermal resistance characteristics against the specific board layout copper area available, as power dissipation capabilities vary significantly between free-air and copper plate mounting conditions.

Part Context

This part belongs to the DMT3020 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The product utilizes a silicon technology process optimized for low RDS(ON) and fast dynamic response times in surface-mount configurations.

Replacement Considerations

Direct substitutes include DMT3020LFDBQ-7 and DMT3020LFDBQ-13 within the same manufacturer family. Cross-manufacturer replacements must verify matching pinout configurations, voltage ratings, and package dimensions to ensure functional compatibility without circuit redesign.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 7.7A at an ambient temperature of +25°C.

Is this component suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical turn-on delay time?

The typical turn-on delay time is 1.8ns under standard test conditions.

DMT3020LFDB-7DMT3020LFDB-7
$0.77
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