DMT3020LFDF-7

$0.73

Description：MOSFET N-CH 30V 8.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b4e3d6ed63ea Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 8.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta), 1.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT3020LFDF-7

Overview

The DMT3020LFDF-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 8.4 A at +25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 17 mΩ at Vgs = 10 V and 9.0 A, or 28 mΩ at Vgs = 4.5 V and 7.0 A. Total power dissipation is rated at 0.7 W at +25°C ambient and 1.8 W when mounted on an FR-4 substrate with a copper heat sink. The component operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.

Feature Summary

Low profile design with a 0.6 mm case height suitable for space-constrained applications
Optimized for high efficiency through minimized on-state resistance and superior switching performance
Capable of logic level gate drive sources due to low gate threshold voltage characteristics

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantity and reel specifications. Confirm that the requested part number matches the exact electrical ratings and thermal characteristics required for the target application environment. Ensure compliance with relevant environmental directives such as RoHS and REACH standards before finalizing procurement orders.

Selection Notes

Select this component based on its 30 V drain-source voltage rating and 8.4 A continuous current capability. Evaluate the thermal requirements carefully, noting the distinct power dissipation limits between free-air conditions and PCB-mounted configurations. Consider the low gate charge and fast switching times for high-frequency power management designs requiring minimal conduction losses.

Part Context

This component belongs to the DMx30xxLFDF series of N-channel MOSFETs from Diodes Incorporated. These devices utilize advanced trench technology to achieve low on-resistance within a compact U-DFN2020-6 footprint. The series is designed for general-purpose switching and power management applications where small form factor and high efficiency are critical design constraints.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Cross-reference parameters including Vdss, Id, Rds(on), and package dimensions to ensure functional compatibility without altering board layout or thermal performance.