DMT3020LFDFQ-7

$0.49

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fbf66ae2c0af Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT3020LFDFQ-7

Overview

The DMT3020LFDFQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device has a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of 8.4A at TA = +25°C. Maximum on-resistance (RDS(ON)) is 17mΩ at VGS = 10V and 28mΩ at VGS = 4.5V. Gate-source voltage (VGSS) is ±20V, and the operating temperature range spans from -55°C to +150°C.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features a low-profile 0.6mm case height suitable for space-constrained designs.
Utilizes a compact 4mm² PCB footprint to optimize board area.
Constructed with lead-free, halogen-free, and antimony-free materials.

Applications

Power management functions
General purpose interfacing switches

Procurement Notes

Verify that the specific part number suffix matches the required packaging quantity, as the datasheet lists both 3,000 units per tape and reel and 10,000 units per tape and reel options. Confirm compliance with RoHS directives and IATF 16949 manufacturing facility requirements when sourcing components intended for automotive change control environments.

Selection Notes

Select this component for circuits requiring a 30V N-channel switch with low conduction losses. The low gate threshold voltage facilitates efficient drive signals. Ensure thermal design accounts for the specified junction-to-ambient resistance values based on the copper plate layout used in the application.

Part Context

This component belongs to the DMT series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is specifically engineered to meet automotive industry standards, distinguishing it from general-purpose variants through its qualification processes and material specifications.