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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT3020LFDFW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-resistance (RDS(ON)) of 17mΩ at VGS=10V, supporting an 8.4A continuous drain current. The device utilizes a U-DFN2020-6/SWP package with wettable flanks for optical inspection. Key electrical parameters include a gate threshold voltage of 1.0V to 2.5V, total gate charge of 7.0nC, and a junction temperature range of -55°C to +150°C.
Feature Summary
- Low profile design with a 0.6mm height suitable for space-constrained applications
- Wettable flank technology enables improved optical inspection reliability
- Optimized for high-efficiency power management through minimized on-state resistance
- Compliant with RoHS standards and free from halogen and antimony
Applications
- General-purpose interfacing switches
- Power-management functions in electronic circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-DFN2020-6/SWP package type matches the required PCB footprint dimensions. Ensure compatibility with moisture sensitivity level 1 requirements during assembly processes.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is required for efficient switching. The 30V rating suits low-voltage DC-DC converters and load switches. Verify thermal dissipation capabilities against the application's duty cycle and ambient temperature constraints.
Part Context
This part belongs to Diodes Incorporated's generation of silicon MOSFETs designed for general-purpose use. It replaces older technologies by offering superior switching performance alongside reduced conduction losses within the same or smaller form factors available in the broader product line.
Replacement Considerations
Check datasheet DS46355 for direct pin-compatible alternatives within the DMT3020 series. Verify if other packages like PowerDI3333-8 meet spatial requirements while maintaining similar electrical characteristics.
