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The DMT3020LFDFWQ-7 is a 30V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 8.4A at TA = +25°C with VGS = 10V. The device exhibits a low on-resistance (RDS(ON)) of 17mΩ max at VGS = 10V and 28mΩ max at VGS = 4.5V. Packaged in a U-DFN2020-6/SWP (Type UXG) footprint, it supports a total power dissipation of 1.8W at TA = +25°C when mounted on an FR-4 substrate. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix '-7' indicates tape and reel packaging containing 3,000 units per carrier. Confirm that the component meets AEC-Q101 qualification requirements if deployed in automotive systems. Ensure design compliance with IATF 16949 manufacturing standards. Validate thermal management strategies against the specified junction-to-ambient resistance values under intended load conditions.
Select this component for designs requiring a low-profile surface-mount solution with high current handling capabilities. The U-DFN2020-6 package provides a small footprint suitable for space-constrained boards. Consider the gate threshold voltage characteristics for logic-level driving compatibility. Evaluate thermal performance based on the specific copper area available on the printed circuit board layout.
This part belongs to the DMT3020 series of N-channel MOSFETs produced by Diodes Incorporated. It shares core electrical specifications with variants like the DMT3020LFDF-7 but differs in packaging type and automotive qualification status. The 'WQ' designation typically denotes specific automotive-grade processing and traceability requirements distinct from standard commercial equivalents.
DMT3020LFDF-7
The maximum pulsed drain current (IDM) is rated at 40A for a 10µs pulse duration with a 1% duty cycle.
Yes, the operating and storage temperature range extends up to +150°C for the junction temperature.