DMT3020LFDFWQ-7

DMT3020LFDFWQ-7

$0.09
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:45879ab3c2ae Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:8.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:17mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:393 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):700mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:U-DFN2020-6 (SWP) (Type UXG)
  • Package / Case:6-UDFN Exposed Pad

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DMT3020LFDFWQ-7

Overview

The DMT3020LFDFWQ-7 is a 30V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 8.4A at TA = +25°C with VGS = 10V. The device exhibits a low on-resistance (RDS(ON)) of 17mΩ max at VGS = 10V and 28mΩ max at VGS = 4.5V. Packaged in a U-DFN2020-6/SWP (Type UXG) footprint, it supports a total power dissipation of 1.8W at TA = +25°C when mounted on an FR-4 substrate. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards and PPAP capable for automotive use
  • Features wettable flank terminals to improve optical inspection reliability
  • Utilizes a 0.6mm profile package with a compact 4mm² PCB footprint
  • Manufactured in IATF 16949 certified facilities with lead-free and halogen-free materials

Applications

  • Power-management functions
  • General-purpose interfacing switches

Procurement Notes

Verify the specific suffix '-7' indicates tape and reel packaging containing 3,000 units per carrier. Confirm that the component meets AEC-Q101 qualification requirements if deployed in automotive systems. Ensure design compliance with IATF 16949 manufacturing standards. Validate thermal management strategies against the specified junction-to-ambient resistance values under intended load conditions.

Selection Notes

Select this component for designs requiring a low-profile surface-mount solution with high current handling capabilities. The U-DFN2020-6 package provides a small footprint suitable for space-constrained boards. Consider the gate threshold voltage characteristics for logic-level driving compatibility. Evaluate thermal performance based on the specific copper area available on the printed circuit board layout.

Part Context

This part belongs to the DMT3020 series of N-channel MOSFETs produced by Diodes Incorporated. It shares core electrical specifications with variants like the DMT3020LFDF-7 but differs in packaging type and automotive qualification status. The 'WQ' designation typically denotes specific automotive-grade processing and traceability requirements distinct from standard commercial equivalents.

Replacement Considerations

DMT3020LFDF-7

FAQ

What is the maximum pulsed drain current rating?

The maximum pulsed drain current (IDM) is rated at 40A for a 10µs pulse duration with a 1% duty cycle.

Is the device suitable for high-temperature environments?

Yes, the operating and storage temperature range extends up to +150°C for the junction temperature.

DMT3020LFDFWQ-7DMT3020LFDFWQ-7
$0.09
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