ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.5A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Rds On (Max) @ Id, Vgs：21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：383pF @ 15V
- Power - Max：860mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
Download product information
Overview
The DMT3020UFDB-13 is a dual N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 6.5A at +25°C. The maximum on-resistance (R_DS(ON)) is 21mΩ at V_GS = 10V and 30mΩ at V_GS = 4.5V. Total gate charge (Q_g) is 8.8nC at V_GS = 10V. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with integrated ESD protection diodes for each channel.
- Low profile 0.6mm height suitable for space-constrained applications.
- Optimized for low on-state resistance while maintaining superior switching performance.
Applications
- General-purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 compliance requirements if restricted substances are a constraint for the target assembly process.
Selection Notes
Select this component when a compact dual-NMOS solution is required for 30V logic-level or standard drive applications. Evaluate thermal dissipation capabilities based on the 145°C/W junction-to-ambient resistance for free-air operation versus heatsinked PCB layouts.
Part Context
This part belongs to Diodes Incorporated's DM series of dual MOSFETs. It utilizes a self-aligned gate process technology designed to minimize R_DS(ON). The U-DFN2020-6 package provides a lead-free, halogen-free, and antimony-free construction compliant with environmental directives.
Replacement Considerations
The DMT3020UFDB-7 is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit tape and reel carrier instead of the 10,000-unit quantity.
FAQ
What is the maximum continuous body diode forward current?
The maximum continuous body diode forward current (I_S) is rated at 1.7A.
Does the device include internal gate protection?
Yes, the datasheet specifies that both channels feature an internal ESD protected gate structure.
What is the avalanche energy rating?
The avalanche energy (E_AS) is rated at 8mJ under test conditions of L = 0.1mH.
