ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 150A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMT32M5LPS-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and operates within a junction temperature range of -55°C to +150°C. The device features a maximum drain-source breakdown voltage (BVDSS) of 30V, with a continuous drain current (ID) rating of 150A at TC = +25°C and 120A at TC = +70°C. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 2.0mΩ at VGS = 10V and 30A, or 3.0mΩ at VGS = 4.5V and 30A. Total gate charge (Qg) reaches 68nC at VGS = 10V.
Feature Summary
- Thermally efficient PowerDI5060-8 package design supporting cooler running applications
- Low profile construction under 1.1mm for integration into thin electronic devices
- Optimized switching performance combined with minimized on-state losses
- Lead-free finish compliant with RoHS directives and free of halogens and antimony
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet lists both standard PowerDI5060-8 and PowerDI5060-8/SWP (Type UX) configurations under the same base part number. Confirm that the received component matches the required pinout and mechanical dimensions for your PCB layout before assembly.
Selection Notes
Select this component for applications requiring high current handling in a compact form factor. Evaluate thermal resistance requirements based on ambient versus case temperatures. Ensure gate drive voltages align with the specified RDS(ON) thresholds for optimal efficiency. Verify that the 30V drain-source voltage rating exceeds the maximum circuit operating voltage.
Part Context
This device belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-resistance while maintaining superior switching characteristics. The product line targets power management solutions where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other MOSFET packages or voltage ratings without verifying electrical specifications and pin configurations.
