DMT32M6LDG-13

Overview

The DMT32M6LDG-13 is a symmetric dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and features a drain-source voltage (BVDSS) of 30V. The device offers low on-state resistance, with maximum RDS(ON) values of 2.5mΩ at VGS=10V for Q1 and 2.9mΩ at VGS=10V for Q2. Continuous drain current reaches 47A at TC=+25°C. Total gate charge is approximately 31.7nC at VGS=10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

• Symmetric dual N-channel configuration designed for high efficiency power management applications
• Minimized on-state resistance while maintaining superior switching performance
• Low input capacitance and fast switching speed characteristics
• Lead-free finish compliant with RoHS directives and free of halogen and antimony

Applications

• Power management functions
• High efficiency power conversion circuits
• Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging format when sourcing components. Confirm that the required quantity aligns with standard carrier sizes. Ensure compliance with environmental specifications such as RoHS and halogen-free requirements if mandated by the end product design standards.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution in the PowerDI3333-8 footprint. Evaluate thermal constraints carefully, as the junction-to-ambient thermal resistance is 116°C/W on standard FR-4 boards. Consider the 30V breakdown voltage limit and ensure gate drive voltages remain within the specified ±16V range to prevent damage.

Part Context

This part belongs to the DMT series of advanced MOSFETs from Diodes Incorporated. It is specifically engineered to balance low conduction losses with rapid switching capabilities. The symmetric nature of the dual channels allows for balanced performance in bridge or half-bridge topologies where matched characteristics are beneficial for circuit stability.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should focus on matching BVDSS, RDS(ON), package type, and pinout configurations to ensure functional compatibility without redesigning the PCB layout.

FAQ

What is the maximum continuous drain current for the DMT32M6LDG-13?

The maximum continuous drain current is 47A when the case temperature is maintained at +25°C.

Does the DMT32M6LDG-13 have symmetric electrical characteristics for both channels?

Yes, it is a symmetric dual N-channel MOSFET, meaning Q1 and Q2 share similar structural properties and performance metrics.

What is the operating temperature range for this device?

The device supports an operating and storage temperature range from -55°C to +150°C.