DMT32M6LDG-7

$1.73

Description：MOSFET 2N-CH 30V 21A PWRDI3333
Series：-

SKU:7882329dcf22 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 21A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs：2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2101pF @ 15V
Power - Max：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type G)
Grade：-
Qualification：-

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DMT32M6LDG-7

Overview

The DMT32M6LDG-7 is a symmetric dual N-channel MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 30V and low on-resistance (RDS(ON)) of 2.5mΩ at VGS=10V for Q1, and 2.9mΩ for Q2. Continuous drain current reaches 47A at TC=+25°C. The device offers fast switching with turn-on delay of 8.7ns and total gate charge of 15.6nC at VGS=4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Symmetric dual N-channel configuration designed for high efficiency power management
Minimized on-state resistance combined with superior switching performance
Low input capacitance and low input/output leakage characteristics
Lead-free finish compliant with RoHS standards and halogen/antimony free

Applications

Power management functions
High efficiency power supply designs
DC-DC converter applications

Procurement Notes

Verify the specific ordering suffix to confirm packing quantity; the -7 suffix indicates a 2,000-unit tape and reel carrier, while the -13 suffix denotes a 3,000-unit carrier. Confirm that the required automotive qualification or IATF 16949 manufacturing certification is explicitly requested if intended for such applications, as standard parts do not automatically include these specific change controls.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage, high-current applications. The PowerDI3333-8 package provides a small footprint suitable for space-constrained designs. Ensure the design accounts for the thermal resistance values provided for both ambient and case temperatures to maintain junction temperatures within the specified operating range during steady-state and pulsed operations.

Part Context

This part belongs to Diodes Incorporated's advanced MOSFET portfolio, specifically engineered to balance low conduction losses with rapid switching speeds. The symmetric dual layout allows for efficient half-bridge or synchronous rectifier configurations within a single compact surface-mount package, reducing board space compared to discrete single-channel alternatives.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching BVDSS, RDS(ON), package type, and pinout compatibility.

FAQ

What is the maximum continuous drain current for the DMT32M6LDG-7?

The maximum continuous drain current is 47A at a case temperature of +25°C and 38A at a case temperature of +70°C.

Does the DMT32M6LDG-7 support avalanche energy ratings?

Yes, the device has an avalanche energy rating (EAS) of 22 mJ based on a low frequency and duty cycle keeping TJ at +25°C with an inductance of 0.1mH.