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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel, Common Drain, Common Source (Asymmetrical)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 18A, 10V, 2.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V, 31.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2106pF @ 15V, 2101pF @ 15V
- Power - Max：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type G)
- Grade：-
- Qualification：-
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Overview
DMT32M7LDG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes Silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and a continuous drain current (Id) of 11.6 A at ambient temperature, or 20.1 A at case temperature. The on-resistance (Rds(on)) is specified as 7.5 Ohms. Gate-source voltage limits range from -12 V to +12 V, with a threshold voltage (Vgs(th)) of 2.2 V. Maximum power dissipation is 1.24 W at ambient temperature. Operating temperatures span from -55°C to +150°C junction temperature.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Enhancement mode operation with low gate drive requirements
- Surface-mount PowerDI3333-8 package for automated assembly
Applications
- Low-voltage DC-DC converter circuits
- Load switching applications
- Battery protection modules
Procurement Notes
Verify the specific suffix 'DG' against official Diodes Incorporated documentation to confirm RoHS compliance status and lead time classifications. Confirm that the PowerDI3333-8 package variant matches the required footprint for PCB layout. Cross-reference the manufacturer part number with authorized distributor catalogs to ensure authenticity and traceability before procurement.
Selection Notes
Select this component when a dual N-channel MOSFET is required within a compact PowerDI3333-8 footprint. Ensure the 25 V drain-source voltage rating aligns with the system's maximum operating voltage. Verify that the 7.5 Ohm on-resistance meets the thermal and efficiency constraints of the target application under expected load conditions.
Part Context
The DMT32M7LDG-7 belongs to Diodes Incorporated's discrete semiconductor transistor portfolio, specifically within the MOSFET category. It is designed for general-purpose switching applications requiring dual channels in a small outline package. The product line emphasizes silicon-based performance optimized for modern surface-mount manufacturing processes.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified equivalent part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical parameters, and package dimensions.
