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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2242 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMT34M1LPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 30V and a maximum continuous drain current (I_D) of 100A at TC = +25°C. The static drain-source on-resistance (R_DS(ON)) is rated at a maximum of 3.2mΩ at V_GS = 10V and 5.2mΩ at V_GS = 4.5V. Total gate charge (Q_g) is 39nC at V_GS = 10V. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
- Features excellent Qgd x RDS(ON) Figure of Merit (FOM) and supports 100% unclamped inductive switching to ensure reliability.
- Small form factor thermally efficient package enables higher density end products.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration. Confirm compliance with RoHS directives and verify that the product meets halogen and antimony-free 'Green' device requirements as defined by the manufacturer. Ensure the component matches the PowerDI5060-8 case dimensions and terminal finish specifications before integration.
Selection Notes
Select this component when low on-state losses and high-density packaging are required for 30V applications. Evaluate the thermal resistance characteristics against the expected ambient or case temperatures. Consider the gate threshold voltage and total gate charge parameters to ensure compatibility with the intended driver circuitry and switching frequency requirements.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is specifically engineered for compact power management designs. The PowerDI5060-8 package provides a robust solution for surface mount applications requiring efficient heat dissipation within a small footprint.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical ratings, pin configurations, and package dimensions specified in the manufacturer's replacement guidelines.
