DMT35M1LFVW-13

$0.16

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:635028235541 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1057 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

Download product information

DMT35M1LFVW-13

Overview

The DMT35M1LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8/SWP (Type UX) packaging to minimize on-state resistance while maintaining superior switching performance. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 64A at TC = +25°C, and a static drain-source on-resistance of 5.5mΩ max at VGS = 10V. The device supports an operating temperature range from -55°C to +150°C.

Feature Summary

Low RDS(ON) design minimizes on-state losses for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
100% unclamped inductive switching (UIS) tested in production.

Applications

Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The -13 suffix indicates a tape and reel carrier with a packing quantity of 3,000 units. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Ensure the application requires a 30V rating and can accommodate the thermal characteristics provided. Evaluate the low gate charge and fast switching speeds against the specific load requirements to optimize system efficiency.

Part Context

This part belongs to the DMT series of N-channel MOSFETs designed for surface-mount applications. It is engineered to replace larger packages like SO-8 in modern electronics where board real estate is limited. The device integrates robust UIS capabilities to handle inductive loads reliably.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified equivalent parts. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, thermal resistance, and electrical parameter alignment.

FAQ

Is the DMT35M1LFVW-13 suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, contact Diodes Incorporated directly as standard production may not meet these specific criteria.