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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1009 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：910mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2020-6 (Type W)
- Package / Case：6-PowerXDFN
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Overview
The DMT35M4LFDF4 is a 30V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management. It features an X2-DFN2020-6 package with a 0.4mm profile and a 4mm² PCB footprint. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 30V, a maximum continuous drain current (ID) of 12A at +25°C, and a low on-resistance (RDS(ON)) of 9mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Ultra-low profile construction suitable for space-constrained designs
- Minimized on-state resistance combined with optimized switching performance
- Low gate threshold voltage enabling efficient drive requirements
- Totally lead-free and fully RoHS compliant green device
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Ensure that the selected variant matches the required tape and reel format for automated assembly processes. Cross-reference the datasheet revision number to guarantee alignment with the most recent technical parameters and mechanical dimensions provided by the manufacturer.
Selection Notes
Evaluate the thermal resistance characteristics relative to the intended PCB copper area and mounting configuration. Consider the junction-to-case thermal resistance when designing heat dissipation strategies for high-current applications. Verify that the gate charge and threshold voltage align with the driving circuit capabilities to ensure optimal switching efficiency and minimize power losses during operation.
Part Context
This component belongs to Diodes Incorporated's advanced generation MOSFET portfolio, specifically engineered to balance low conduction losses with fast switching speeds. The X2-DFN2020-6 package provides a compact solution for modern electronics requiring high power density in a minimal footprint, distinguishing it from larger traditional packages while maintaining robust electrical performance.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or contact local representatives for verified alternative part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without confirming pinout compatibility and thermal characteristics.
