DMT35M4LFVW-7

$0.72

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:93dfaaaf142a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：982 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT35M4LFVW-7

Overview

The DMT35M4LFVW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 30V, a maximum continuous drain current of 60A at TC=25°C, and a static drain-source on-resistance of 6mΩ max at VGS=10V. The device supports a gate-source voltage range of ±20V, operates within a temperature range of -55°C to +150°C, and features a total power dissipation of 1.5W in steady state.

Feature Summary

Low RDS(ON) minimizes on-state losses while maintaining superior switching performance
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% Unclamped Inductive Switching (UIS) test in production ensures more reliable and robust end application

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and lead-free characteristics as defined by the manufacturer's quality definitions. Ensure the component meets automotive change control requirements if applicable for AEC-Q100/101/200 qualification or IATF 16949 manufacturing facilities.

Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and compact footprint. Evaluate thermal resistance values based on the specific PCB layout and copper thickness used in the design. Consider the transient thermal resistance characteristics for pulsed operation scenarios to ensure junction temperatures remain within safe operating limits.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a PowerDI3333-8 case, which is a molded plastic green molding compound with UL flammability classification rating 94V-0.