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Product Detailed Parameters
- Description：MOSFET N-CH 30V 76A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1667 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.98W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT35M7LFV-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UX) surface-mount packaging. The device features a maximum drain-source breakdown voltage of 30V and a gate-source voltage rating of ±20V. At VGS = 10V, the static drain-source on-resistance is typically 3.6mΩ with a maximum of 5.0mΩ at ID = 20A. Continuous drain current reaches 76A at TC = +25°C. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high efficiency power management
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- ESD protected gate
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when low on-state resistance is critical for minimizing conduction losses in compact designs. The PowerDI3333-8 package offers significant board space savings compared to traditional SO-8 packages. Consider the thermal performance requirements, as the device supports high continuous currents when mounted on appropriate FR-4 substrates with adequate copper plating.
Part Context
This part belongs to the Diodes Incorporated DMT series of silicon N-channel MOSFETs. These devices are engineered to balance low on-resistance with superior switching performance. The DMT35M7LFV specifically targets applications requiring high current handling within a minimal footprint, leveraging advanced trench technology for improved thermal and electrical characteristics.
Replacement Considerations
Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified equivalent parts. Ensure any replacement maintains compatibility with the PowerDI3333-8 (Type UX) package dimensions and pinout configuration.
