DMT35M8LDG-13

$0.34

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-

SKU:d955b6cf946b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs：4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1510pF @ 15V, 1032pF @ 15V
Power - Max：980mW (Ta), 2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PowerDI3333-8 (Type G)
Grade：-
Qualification：-

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DMT35M8LDG-13

Overview

The DMT35M8LDG-13 is an asymmetric dual N-channel MOSFET in a PowerDI3333-8 package. Q1 offers a maximum RDS(ON) of 4.7mΩ at VGS=10V and 5.7mΩ at VGS=4.5V, with a continuous drain current (ID) of 17.0A. Q2 provides a maximum RDS(ON) of 5.8mΩ at VGS=10V and 7.3mΩ at VGS=4.5V, with a continuous ID of 15.3A. Both channels feature a BVDSS of 30V and a VGSS rating of ±12V.

Feature Summary

Asymmetric dual configuration designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Low input capacitance and fast switching speed characteristics that support efficient operation in demanding power applications.
Low input/output leakage currents ensure minimal power loss during off-states.
RoHS compliant lead-free finish with halogen and antimony-free green device construction.

Applications

Power-management functions
High-efficiency power supply designs
DC-DC converter circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 3000 units. Confirm that the standard DMT35M8LDG datasheet aligns with your design requirements, noting that automotive-compliant variants are documented under separate specifications such as DMT35M8LDGQ.

Selection Notes

Select this component when an asymmetric dual N-channel MOSFET is required within a compact PowerDI3333-8 footprint. The distinct electrical parameters between Q1 and Q2 allow for optimized circuit topologies where different current handling or resistance levels are beneficial for specific power management tasks.

Part Context

This part belongs to Diodes Incorporated's DMT series of MOSFETs, specifically utilizing the PowerDI3333-8 surface-mount package. It is engineered to balance low conduction losses with rapid switching capabilities, addressing the needs for space-constrained and thermally sensitive electronic designs.

Replacement Considerations

For automotive-grade requirements, consider the DMT35M8LDGQ variant which follows a separate datasheet. For alternative packaging quantities of the same device, the DMT35M8LDG-7 is available in a 2000-unit tape and reel.

FAQ

What is the difference between Q1 and Q2 in this asymmetric MOSFET?

Q1 has a lower on-resistance (max 4.7mΩ @ 10V) and higher continuous drain current (17.0A), whereas Q2 has slightly higher resistance (max 5.8mΩ @ 10V) and lower current capability (15.3A).