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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：61A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：680mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：152.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11112 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.13W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT3M70LPSW-13 is an N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It features a drain-source voltage (BVDSS) rating of 25V to 30V and is housed in a PowerDI5060-8/SWP package with wettable flank technology. The device supports a continuous drain current of 61A at ambient temperature and dissipates up to 2.13W of power. It is supplied in tape and reel packaging with a quantity of 2,500 units per reel.
Feature Summary
- Utilizes wettable flank PowerDI5060-8/SWP package for enhanced solder joint inspection and reliability
- Designed for high-current surface-mount applications with specified thermal performance
- N-channel configuration optimized for low-voltage switching operations
Applications
- High-current DC-DC converter circuits
- Power management modules requiring compact form factors
- Battery protection and load switch designs
Procurement Notes
Verify the specific BVDSS variant (25V or 30V) required for your design, as the datasheet indicates a range. Confirm the wettable flank package availability matches your assembly capabilities. Ensure the tape and reel quantity aligns with production volume needs. Cross-reference the manufacturer part number with official Diodes Incorporated documentation to confirm current lifecycle status and compliance details before finalizing procurement.
Selection Notes
Select this component when a robust N-channel MOSFET with high current capability is needed in a small footprint. The wettable flank feature aids in automated optical inspection. Consider the 2.13W power dissipation limit and thermal resistance characteristics for heat management. Ensure the gate drive requirements match the logic levels supported by the device for efficient switching performance in low-voltage systems.
Part Context
This part belongs to the DMT series of MOSFETs from Diodes Incorporated, which focuses on advanced packaging solutions like PowerDI. The series targets applications demanding high reliability and space efficiency. The DMT3M70LPSW-13 specifically leverages the SWP suffix to denote the wettable flank variant, distinguishing it from standard PowerDI packages within the same electrical family.
Replacement Considerations
Check for direct substitutes within the DMT3M70LPSW family that may offer different voltage ratings. Verify pinout compatibility if considering alternative manufacturers' equivalents in the PowerDI5060-8 form factor. Ensure thermal and electrical parameters meet or exceed the original specifications for seamless integration.
