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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：160.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12121 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMT4001LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 100 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2.5 mΩ, a gate-source voltage rating of ±20 V, and a threshold voltage (Vgs(th)) of 1 V. The total gate charge (Qg) is 82.2 nC. It supports a power dissipation of 138 W at case temperature and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- High current handling capability with a 100 A continuous drain rating for robust power management applications.
- Ultra-low on-resistance design minimizes conduction losses and improves overall system efficiency.
- Enhanced thermal performance through the PowerDI5060-8 package facilitates effective heat dissipation.
Applications
- DC-DC converter circuits requiring high efficiency and compact form factors
- Power distribution modules in industrial equipment
- Battery protection and switching systems
Procurement Notes
Verify the specific suffix '-13' corresponds to the required tape and reel packaging configuration from official Diodes Incorporated documentation. Confirm that the PowerDI5060-8 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and REACH standards as specified in the manufacturer's environmental declarations before finalizing procurement specifications.
Selection Notes
Select this component when a single N-channel MOSFET with high current capacity is required in a low-profile surface-mount package. Compare the 2.5 mΩ on-resistance against alternative devices to ensure optimal thermal management. Verify that the 40 V voltage rating provides sufficient margin for your specific circuit operating conditions and transient spikes.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated, designed for high-current applications. It shares the PowerDI5060-8 package family with other variants like DMTH4004LPS-13 and DMTH6004LPS-13, which offer similar packaging but different voltage or resistance characteristics. The series emphasizes low Rds(on) and high reliability for modern power electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Diodes Incorporated cross-reference guides for verified alternatives.
