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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：26A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4508 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT4004LPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source breakdown voltage of 40V and a maximum continuous drain current of 26A at +25°C ambient temperature. The device exhibits a low on-resistance of 2.5mΩ at VGS=10V and 4mΩ at VGS=4.5V. Total gate charge is specified as 82.2nC at VGS=10V. Thermal resistance from junction to case is 0.9°C/W, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Engineered for high-efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
- Guarantees 100% unclamped inductive switching capability to ensure robust end-application reliability.
- Low gate charge characteristics designed to minimize switching losses during operation.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2500 units. Confirm that the standard commercial grade meets your application requirements, noting that automotive-grade variants with Q-suffixes are available for those requiring AEC-Q100/101 qualification and IATF 16949 manufacturing certification. Ensure compatibility with RoHS and REACH directives.
Selection Notes
Select this component when a 40V rating is sufficient for the circuit design. The PowerDI5060-8 package offers a compact footprint suitable for space-constrained PCB layouts. Consider the thermal resistance values if operating near the maximum junction temperature limits. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMT series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI5060-8/SWP (Type UX) configuration. The product is compliant with JEDEC standards for high reliability and is halogen and antimony-free.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q100/101 qualification, refer to the related automotive grade parts with the Q-suffix. Consult the manufacturer's automotive products listing for compatible alternatives meeting stricter industry standards.
FAQ
What is the maximum continuous drain current at an ambient temperature of +70°C?
At an ambient temperature of +70°C, the maximum continuous drain current is derated to 21A.
Is the device qualified for automotive applications?
This specific part number is not explicitly listed as AEC-Q100/101 qualified. For automotive applications requiring such qualification, customers should refer to the related automotive grade parts with the Q-suffix.
